Thick film millimeter wave transceiver module

ABSTRACT

A thick film millimeter wave transceiver module includes a base plate and a multi-layer substrate board having a plurality of layers of low temperature transfer tape received on the base plate. The different layers can vary. They can include a DC signals layer having signal tracks in connection; a ground layer having ground connections; a device layer having capacitors and resistors embedded therein; and a top layer having cut-outs for receiving MMIC chips therein. A solder preform layer is located between the device layer and the top layer for securing any MMIC chips. A channelization plate is received over the multi-layer substrate board and a channel is formed to receive MMIC chips and provide isolation between transmit and receive signals.

RELATED APPLICATION

[0001] This application is based upon prior filed copending provisionalapplication Ser. No. 60/231,926 filed Sep. 11, 2000.

FIELD OF THE INVENTION

[0002] This invention relates to microwave monolithic integratedcircuits (MMIC), and more particularly, this invention relates tomodules having a microwave monolithic integrated circuit that can betuned for optimum performance and improved packaging of a MMIC andtransceiver module.

BACKGROUND OF THE INVENTION

[0003] The recent explosion in wireless telecommunications has increasedthe demand for high performance millimeter wave radio frequency (RF)modules. One of the major cost and yield drivers for high frequency MMICmodules has been manual tuning to optimize module performance. Themajority of MMIC RF amplifiers are not self biased. Therefore, eachamplifier requires gate voltage (Vg) adjustment to tune the amplifier toits nominal operating conditions. This tuning normally occurs after theamplifiers have been assembled in the module and are connected to thepower supply.

[0004] In order to have access to the chips in the module, probestations are required. In addition, highly skilled operators arenecessary to probe these small devices under a microscope. Damage to thechips is very common, even with veteran MMIC technicians. Theneedle-like probes used in the tuning cost thousands of dollars, andusually have a limited life because of wear and tear. It is estimatedthat it takes 20 to 30 minutes to probe each amplifier.

[0005] Many attempts have been made to automate the probing process, andthere has been some limited success. The time and cost, however,involved in designing and using automatic module probing is extensive.In most cases, unique module designs prevent the use of a particularautomatic probe station for more than a single module. These drawbackshave presented a challenge to many companies active in designing andmanufacturing RF modules. As a result, high frequency modules are notproduced in high volume. In most cases, manufacturers are forced to useexpensive equipment and a large staff of qualified technicians tomanufacture large numbers of RF modules.

[0006] Chip packaging for MMIC chips also is increasingly important.MMIC radio frequency modules have never been manufactured in highquantity amounts because the MMIC chips are fragile, typically 2 toabout 4 mil thick, and difficult to handle. Air bridges, located overthe surface of the chips, make it difficult to pick the chips from thetop or exert pressure on the chips.

[0007] Special pick-up tools with pick-in-place equipment have been usedto automatically pick-in-place the MMIC chips. These tools are expensiveto manufacture and usually different MMIC chips require different tools.This has presented a challenge to different manufacturing companiesbecause most automatic pick-in-place machines are limited to a limitednumber of tools for MMIC chips. In some cases, a manufacturer must use aseries of different pick-in-place machines to assemble one radiofrequency module. This is inefficient.

[0008] These MMIC radio frequency modules also are built in low volumeamounts because there are usually a high number of MMIC chips,substrates and peripherals that are installed in each module. Forexample, a typical millimeter wave transceiver would have about 10 toabout 15 MMIC chips, 15-20 pieces of substrate, and about 50-60 otherperipheral components, such as resistors and capacitors. There is also arequirement that each of the components be connected via wire or ribbonbonds. This has also presented the challenge to millimeter wave modulemanufacturing companies.

SUMMARY OF THE INVENTION

[0009] A thick film millimeter wave transceiver module includes a baseplate. A multi-layer substrate board has a plurality of layers of lowtemperature transfer tape received on the base plate. The layerscomprise at least one of a DC signals layer having signal tracks andconnections, a ground layer having ground connections, a device layerhaving capacitors and resistors embedded therein, and a top layer havingcut-outs for receiving MMIC chips therein. A solder preform layer islocated between the device layer and the top layer for securing any MMICchips. A channelization plate is received over the multi-layer substrateboard and has channels formed to receive MMIC chips and provideisolation between transmit and receive signals.

[0010] In yet another aspect of the present invention, the module caninclude isolation vias, which extend through multiple layers down to theground layer. A radio frequency cover is received over thechannelization plate. Each of the layers within the multi-layersubstrate board can be about 2 to about 4 mil thick. Typically thelayers are about 3 mil thick and the top layer is about 4 mil thick. Thebase plate can be formed from one of copper tungsten or other CTEmatched material. The base plate is about 0.1 to about 0.3 inches thick.In yet another aspect of the present invention, the base plate is about0.125 inches thick.

[0011] A method is also disclosed and comprises forming a thick filmmillimeter wave transceiver module by forming a base plate and forming amulti-layer substrate board having a plurality of layers of lowtemperature transfer tape. The substrate board is received on the baseplate and comprises one of at least a DC signals layer having signaltracks and connections; a ground layer having ground connections; adevice layer having capacitors and resistors embedded therein; and a toplayer having cut-outs for receiving MMIC chips therein. The MMIC chip issecured by solder.

BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Other objects, features and advantages of the present inventionwill become apparent from the detailed description of the inventionwhich follows, when considered in light of the accompanying drawings inwhich:

[0013]FIG. 1 is a schematic circuit diagram of a self-tuned millimeterwave transceiver module of the present invention.

[0014]FIG. 2 is an exploded isometric view of a microwave monolithicintegrated circuit (MMIC) package of the present invention.

[0015]FIG. 2A is a plan view of the MMIC package shown in FIG. 2.

[0016]FIG. 2B is a side election view of the MMIC package shown in FIG.2.

[0017]FIG. 3 is an exploded isometric view of a multi-layer, thick film,millimeter wave radio frequency transceiver module, and showing thecover, channelization section, multi-layer thick film section, and thebottom plate.

[0018]FIG. 4 is an exploded isometric view of the various layers of thethick film section.

[0019]FIG. 5 is an exploded isometric view of a transceiver module, andshowing the various connections.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] The present invention will now be described more fullyhereinafter with reference to the accompanying drawings, in whichpreferred embodiments of the invention are shown. This invention may,however, be embodied in many different forms and should not be construedas limited to the embodiments set forth herein. Rather, theseembodiments are provided so that this disclosure will be thorough andcomplete, and will fully convey the scope of the invention to thoseskilled in the art. Like numbers refer to like elements throughout.

[0021] The present invention advantageously eliminates manual amplifierprobing and module tuning in MMIC module manufacturing. By using lowcost surface mount devices and a microprocessor, the RF moduleperformance can be optimized in real time with no intervention for usein communications, radar, fiber optic, and other RF applications. Theadvantages include:

[0022] 1. Optimization of RF MMIC amplifier operation without manual orautomatic probing or tuning.

[0023] 2. A simple low cost solution (<$1) per amplifier that eliminatesmodule probing and tuning.

[0024] 3. Self-tuning that requires no die probing or testing.

[0025] 4. Reduced RF module assembly and test at least by a factor of 5.

[0026] 5. Chip level self diagnostics.

[0027] 6. Transmitter gain and output power control without usingattenuator chips.

[0028] 7. Temperature compensation without the use of active attenuator.

[0029] 8. Reducing/controlling the DC power dissipation as a function ofoutput power, therefore controlling thermal conditions.

[0030] 9. Testing RF power through the use of a power monitor circuit.

[0031] 10. Using an embedded microprocessor for continuous real-timeoptimization of module performance.

[0032] 11. User optimization of key module performance parameterswithout circuit design changes.

[0033] 12. Shutting down the transmitter RF output (sleep mode) forsafety without switching off the power supply.

[0034] 13. Upgrading module performance via module software upgrade,i.e., a customer pays only for needed features.

[0035] 14. Correcting for parts variation as a function of temperatureand frequency using the on board EEPROM to store characteristics data.

[0036]FIG. 1 illustrates the low cost circuit used to self bias the MMICamplifiers. The entire circuit is implemented using low cost commercialoff the shelf (COTS) surface mount chips.

[0037] As illustrated, a schematic circuit diagram of the self-tunedmillimeter wave transceiver module 10 of the present invention is shown.The module 10 includes a radio frequency MMIC chip formed as a moduleand illustrated by the dashed lines at 12 and a surface mounted digitalmicrocontroller, indicated by the dashed lines at 14.

[0038] The MMIC module includes a plurality of amplifiers, as is typicalwith a MMIC chip, but only illustrates one amplifier 16. The radiofrequency signal enters and passes through a filter 18 and into theamplifier 18 having the normal gate, source and drain. The radiofrequency signal passes from the amplifier 16 into other amplifiers 16 a(if present), as known to those skilled in the art. The MMIC chip 12 caninclude a large number of amplifiers 16 on one chip, as known to thoseskilled in the art. The surface mounted digital controller 14 includes adigital potentiometer 20 having a nonvolatile memory circuit. An exampleof a potentiometer includes a AD5233 circuit, as known to those skilledin the art. The potentiometer 20 can handle a bias voltage of about −3volts.

[0039] A current sensor 22, such as a MAX471 with a drain voltage of3-12 volts, is coupled to ground and to the amplifier 16 through thedrain. The current sensor 22 is connected to a multi-channel sampling,analog/digital circuit 24, such as an AD7812 circuit, as known to thoseskilled in the art. Other current sensors connect to other amplifiers(not shown) and connect to the multi-channel A/D circuit 24. Atemperature sensor 26 is connected to the multi-channel sampling A/Dcircuit and is operative for measuring the temperature of the MMICmodule. A microprocessor 28 is included as part of the surface mounteddigital controller, and operatively connected to an EEPROM 29 and othercomponents, including the multi-channel sampling A/D circuit 24 and thenonvolatile memory digital potentiometer 20. As shown, the potentiometer20 is connected to other amplifiers on the MMIC and can step gatevoltage for respective amplifiers and provide individual control.

[0040] As also illustrated, the radio frequency signal from theamplifier 16 can pass from passive coupler 30 to a power monitor diodeor other detector circuit 32 connected to ground. This connection frompassive coupler 30 can be forwarded to the multi-channel sampling A/Dcircuit 24.

[0041] The circuit shown in FIG. 1 adjusts automatically the amplifiergate voltage (Vg) until the amplifier 16 reaches its optimum operatingcondition as measured by the amount of current drawn by the drain (Id),and as measured by the detector circuit 32 at the output of theamplifier (if available). This is achieved by controlling (through aserial digital interface) the Digital-to-analog (D/A) converter outputvoltage generated from potentiometer 20. The D/A converter includes anonvolatile memory and is currently available with four channels forless than $3 at the current time.

[0042] As the gate voltage is varied, the current sensor 22 provides avoltage output that is proportional to the drain current drawn by theamplifier 16. The current sensor output is digitized by themulti-channel serial analog-to-digital converter (A/D) 24 that digitizesthe drain current level. The current level word is compared to apre-stored optimum amplifier drain current level, such as contained inthe EEPROM 29. The gate bias level is adjusted until the optimum draincurrent is reached. The detector circuit, which is available either onthe MMIC chip or could be added externally, provides a confirmation thatthe drain current setting is at the optimum level by measuring theoutput power. The detector output 32 is compared to a pre-stored valuethat defines the expected nominal value at the output of the amplifier.

[0043] The drain current adjustment, the current sensing and detectoroutput measurements can be implemented in a real-time continuousadjustment mode by using low cost microprocessor or through a one-timesetting that is accomplished during module test. The EEPROM 29 can beused to store preset chip characteristics, such as optimum drain currentand expected output at various stages in the RF circuit.

[0044] The current measurement sensor 22 also allows for diagnostics ofeach amplifier in the circuit. The current measurement circuit willsense any unexpected drop or increase in current draw. By monitoring thetemperature sensor 26, the microprocessor 28 determines whether a changein current (Id) is caused by a temperature change or malfunction. Thestatus of each amplifier 16 is reported via the digital serialinterface.

[0045] In cases where DC power dissipation is a prime concern because ofthermal issues, any amplifiers 16 can be adjusted via the gate biascontrol such that the amplifiers draw minimal current. A user may selecta maximum temperature, and the microprocessor will maintain thetransceiver at or below that temperature by controlling the DC powerdissipation in the MMIC chips.

[0046] Traditional methods of controlling gain and output power in RFmodules has been to use active attenuators in the transmit chain. Thisis inefficient because any amplifiers in the chain will dissipate power.By using the digital potentiometer 20, the gain and output power of eachamplifier can be controlled individually or in groups. The presentinvention allows the module to have infinite control over gain andoutput power, without adding active attenuators after each amplifier,thus, reducing cost and eliminating unnecessary DC power dissipation.

[0047] RF power sensing can be achieved through the power monitor diodeand detector circuit 32 by coupling some of the amplifier output power(15 to 20 dB) into the passive coupler 30. The output of the coupler issensed by a diode 32 a. The output of the diode 32 a is amplified anddigitized via the serial A/D converter.

[0048] The digital potentiometer 20, current sensor 22 for eachamplifier, and the temperature sensor 26 allows the module to selfadjust its gain as a function of temperature changes. This isaccomplished by maintaining the pre-set current draw from each amplifierconstant as the module temperature changes. With the present invention,the module gain and output power can be controlled with high precision.

[0049] A user's ability to program the module gain at any stage in thecircuit chain provides the flexibility to trade-off key performanceparameters, such as transmitter noise figure (NF) versus intermodulationlevel (IM), without changing the circuit design. Real-time individualchip control also allows the user to operate in a desired condition,such as a linear mode for high modulation communications.

[0050] It should be understood that the self-optimization technique ofthe present invention can also be used on different devices with theMMIC chip, such as a mixer, multipliers, and an attenuator. By pinchingoff (maximum negative gate bias), all amplifiers in the transmit chaincan be highly attenuated (over 50 dB) for safety reasons duringinstallation. The present invention requires no additional switches orhardware.

[0051] The use of the microprocessor 28 and the chip control circuits asexplained above allows the module manufacturer to enable only thosefeatures that a customer desires for a particular application. Althoughthe module hardware is identical, the module features will be controlledby software. This allows flexibility of using the same module in manydifferent applications, including wireless point-to-point, point tomulti-point or Vsat. Additionally, the use of the microprocessor and astandard interfaces allows programmability and software upgrades (foradditional features) of the modules in the field without removing them.

[0052] The use of a microcontroller 14 with the associatedmicroprocessor 28 and onboard EEPROM 29 allow for correction and tuningof various functions within the module. The corrections may include, butare not limited to (a) gain variation over temperature, (b)linearization of the power monitor circuit as a function of temperatureand frequency, (c) gain equalization as a function of frequency, and (d)power attenuation linearization as a function of frequency andtemperature. The use of a microprocessor 28 to control each of theactive devices with the RF module, and the use of the EEPROM 29 to storecorrection factors, allow a high degree of flexibility and enables themodule to operate with high accuracy and performance. Modulecharacterization data (gain, power, noise figure) are collected overtemperature and frequency during module testing. The correction factorsare calculated automatically by a Test Station and stored in the EEPROM29. The correction factors are used during normal module operation toprovide a desired performance.

[0053] The present invention also provides an improved MMIC chip packageas shown in FIGS. 2, 2A and 2B. The MMIC package 40 has severaladvantages.

[0054] 1. Protection of MMIC chips in coefficient of thermal expansion(CTE) matched packages.

[0055] 2. Packaging of MMIC chips at very low cost.

[0056] 3. Improved auto pick and placement, direct wire bonding andribbon bonding, without causing damage to a fragile MMIC.

[0057] 4. Improved chip performance (isolation) through miniaturepackaging.

[0058] 5. An RF module housing formed of low cost material, such asaluminum.

[0059]FIG. 2 illustrates an exploded isometric view of the package 40,and showing the MMIC chip 42 and a base plate 44 that is matched as toits coefficient of thermal expansion (CTE) with the MMIC. A solderpreform 46 is contained on the base plate 44 and the MMIC is mounted onthe solder preform 46. A chip cover 48 covers the MMIC. As shown, thebase plate includes opposing side rails 44 a that extend along a portionof formed edges to leave the end areas open. The chip cover 48 includesopposing and two spaced overlap legs 48 a. The opposing side rails 44 aand overlap legs 48 a are configured such that when the chip cover isplaced over the MMIC chip 42, solder preform 46 and CTE matched baseplate 44, the side rails and overlap legs engage the respective chipcover and base plate, as shown in FIGS. 2A and 2B, to form open areas atthe top and side of the corners and to leave exposed any pads 50 on theMMIC for wire and ribbon bonding thereto.

[0060] The MMIC module production can be similar to surface mounttechnology by packaging the MMIC chips to facilitate handling of thechips. The base plate 44 is formed of low cost Coefficient of ThermalExpansion (CTE) matched material, such as a copper tungsten alloy, CuW,or aluminum silicon alloy, ALSi, having a thickness of about 10-15 mil.The cover 48 can be made out of many types of material includingplastic. A 1-2 mil solder preform (such as gold tin) is received on thebase plate 44. The cover 48 is shaped in such a manner that it does notcover the chip input and output pads and the DC pads (gate and drain).

[0061] The base plate 44, the cover 48, the solder preform 46 and theMMIC chips 42 are delivered in waffle packs or similar packaging. Thesepackages are placed on an automatic pick and place (P&P) machine, asknown to those skilled in the art. The P&P machine is programmed to pickthe base plate and place it in a waffle pack, which can be used at ahigh temperature for eutectic soldering (such as graphite), usingtemperature ranges known to those skilled in the art. The P&P machinepicks and places the solder preform 46 into the base plate 44. The MMICchip is placed on top of the solder preform 46. The cover is placed overthe top of the chip 42. This process is repeated for every MMIC chip.

[0062] It is estimated that the total P&P per chip package would takeabout 10 seconds. The number of chips that can be packaged in a dayusing a single P&P machine is well over 8000. The entire waffle packwith the package assembly, including the MMIC chips, is placed in aeutectic solder oven to flow the solder and attach the chip to the baseplate and attach the cover to the base plate.

[0063] FIGS. 3-5 illustrate an improved radio frequency transceivermodule using thick film technology, such as the low temperature cofiredceramic technology known as green tape. More particularly, FIG. 4illustrates a multilayer substrate board 50 having different layers oflow temperature transfer tape technology (LTTT) sheets, including a DCsignals layer 52, ground layer 54, embedded capacitors and resistorslayer 56, solder preform layer 58 and top layer 60.

[0064]FIG. 3 illustrates how the different layers in FIG. 4 are combinedto form a multilayer thick film substrate board 50 that is received on abase plate 62 with a channelization plate 64 and radio frequency cover66. Isolation vias 67 are shown and illustrated. These vias can runacross multiple layers down to the ground layer. They can be formed bytechniques known to those skilled in the art.

[0065]FIG. 5 shows a MMIC transceiver module 70 with the waveguideinterface 72 built into the channelization plate 64 and showing theintermediate frequency outputs 74, local oscillator input 76,intermediate frequency input 78, various DC pins 80, module connectors82 and external connectors 84 on a CCA.

[0066] The present invention improves the MMIC module assembly processby using a low cost multilayer transfer tape thick film board 50 forattaching the MMIC chips 86 and embedding all the peripherals andelectrical connections in the multilayer thick film. The presentinvention offer several benefits.

[0067] 1. A new use of Low Temperature Transfer Tape Technology (LTTT)multi-layer board for MMW module design and fabrication.

[0068] 2. Simplification of MMIC module assembly by reducing part countby a factor of five.

[0069] 3. Reducing peripheral components count by embedding allresistors and capacitors in a multilayer thick film board.

[0070] 4. Embedding electrical connections in the multi-layer board,there by reducing the number of wire and ribbon bonds.

[0071] 5. Using a planar module configuration for ease of assembly, thenattaching RF channelization after dies assembly.

[0072] 6. Improving RF isolation through channelization,compartmentalization and ground vias.

[0073] 7. Reducing housing cost by using wire-EDM method forchannelization, instead of machining.

[0074] 8. Directly attaching the SMA and K-connectors directly to themultilayer substrate board.

[0075] MMIC module production is made similar to surface mounttechnology by packaging the MMIC modules to allow complete automation ofthe assembly process. As shown in FIG. 3, the module is made up of thebase plate 62, multilayer alumina substrate 50 formed from the layers, achannelization plate 64 and a cover 66.

[0076] The base plate 62 is a gold plated flat sheet of low cost CTEmatched material, such as Cooper Tungsten (CuW), about ⅛ inch thick, inone aspect of the invention. The plate is only cut to size and requiresno machining.

[0077] The multilayer substrate board 50 is fabricated using the LowTemperature Transfer Tape (LTTT) technology, such as similar to thegreen tape technology, as well known to those skilled in the art,similar to low temperature cofired ceramic (LTCC) sheets. The LTTTprocessing closely follows the steps used in well establishedmulti-layer thick film processing, as known to those skilled in the art.The multiple dielectric printing per layer is replaced by a tapelamination step. Both gold and silver conductor systems can be used withLTTT. Interconnects and vias are formed by techniques known to thoseskilled in the art.

[0078] Although the LTTT process for forming multilayer structures canbe applied to a wide variety of dielectric materials and substrate, thematerial selected for this illustrated aspect of the present inventionis a standard 96% alumina substrate. The special formulated conductormaterials are screen printed on the alumina substrate, using standardthick film equipment and processing techniques developed for formingconductive interconnects and interlayer vias. The tape sheets are bondedto the substrate using a combination of heat and pressure.

[0079]FIG. 4 show an example of the type of layers that can be used toform the alumina board. The number of layers can be as high as 12. Thelayers could be formed on a base substrate (S), as illustrated, of thetype known to those skilled in the art. Each layer is about 2 to about 4mil thick, and typically about 3 mil thick, and can be used to carry lowfrequency RF signals, DC signals, ground, or embedded passivecomponents, such as capacitors and resistors. Interconnect or groundvias can be implemented across one or more layers of LTTT film.

[0080] This multilayer LTTT alumina substrate is particularly attractivefor use with GaAs chip because of its CTE coefficient (7.1). Also, thismaterial has excellent thermal conduction (25-200 W/MK). The MMIC GaAschips can be attached directly to the substrate using gold tin solderpre-forms or silver epoxy. In cases of thermal concerns, the chips maybe attached directly to the base plate using CTE matched shims, or ontop of thermal vias that are connected to the bottom surface. These viascan be formed by techniques known to those skilled in the art. For easeof assembly and wire bonding, the top layer (3 to 4 mil thick) will havecut-outs made exactly to the size of the chips (see FIG. 5).

[0081] The multilayer substrate costs on the average about $1.5 to $2.5per layer per square inch. Up to 275 vias per square inch are possible.

[0082] The channelization plate 64, in one aspect of the presentinvention, is formed of gold plated aluminum, although other materialscould be used. The channels 64 a are cut out using wire EDM methods. Thechannels 64 a are created to provide the isolation required between thetransmit and receiver signals and to generate a cut off to lowerfrequency signals. The RF cover is also made of gold plated aluminum.

[0083]FIG. 5 illustrates a MMW transceiver module including the surfacemount circuit card assembly (CCA) used to provide theregulator/controller function. The SMA connectors are attached directlyto the multilayer substrate. The RF interface waveguide is provided aspart of the channelization plate.

[0084] The module shown in FIG. 5 can be assembled by the followingtechnique as one non-limiting example.

[0085] 1. Pick and place all the MMIC chips on to the multi-layeralumina substrate. The substrate should have all the low frequencysignals connections, DC connections, ground connections, passive devicesalready embedded in the layers and the solder pre-form.

[0086] 2. Pick and place the DC connector and the low frequency SMAconnectors used for IF and LO signals.

[0087] 3. Flow the solder in a vacuum oven to attached the MMIC die andthe connectors to the substrate board. Silver epoxy may be used in placeof the solder.

[0088] 4. Wire/wedge bond the MMIC chips to the substrate board.

[0089] 5. Attach the substrate board to the base plate and thechannelization plate using epoxy.

[0090] 6. Install RF cover.

[0091] 7. Install the regulator/controller surface mount CCA.

[0092] This application is related to copending patent applicationsentitled, “MICROWAVE MONOLITHIC INTEGRATED CIRCUIT PACKAGE,” and“SELF-TUNED MILLIMETER WAVE RF TRANSCEIVER MODULE,” which are filed onthe same date and by the same assignee and inventors, the disclosureswhich are hereby incorporated by reference.

[0093] Many modifications and other embodiments of the invention willcome to the mind of one skilled in the art having the benefit of theteachings presented in the foregoing descriptions and the associateddrawings. Therefore, it is to be understood that the invention is not tobe limited to the specific embodiments disclosed, and that themodifications and embodiments are intended to be included within thescope of the dependent claims.

That which is claimed is:
 1. A thick film millimeter wave transceivermodule comprising: base plate; a multi-layer substrate board having aplurality of layers of low temperature transfer tape and received onsaid base plate, said layers comprising at least one of a DC signalslayer having signal tracks and connections; a ground layer having groundconnections; a device layer having capacitors and resistors embeddedtherein; a top layer having cutouts for receiving MMIC chips therein; asolder preform layer located between said device layer and said toplayer for securing any MMIC chips; and a channelization plate receivedover the multi-layer substrate board and having channels formed toreceive MMIC chips and provide isolation between transmit and receivesignals.
 2. A thick film millimeter wave transceiver module according toclaim 1, and further comprising isolation vias which extend throughmultiple layers down to the ground layer.
 3. A thick film millimeterwave transceiver module according to claim 1, and further comprising aradio frequency cover received over said channelization plate.
 4. Athick film millimeter wave transceiver module according to claim 1,wherein each of said layers within said multi-layer substrate board isabout 2 to about 4 mil thick.
 5. A thick film millimeter wavetransceiver module according to claim 4, wherein said layers are about 3mil thick.
 6. A thick film millimeter wave transceiver module accordingto claim 5, wherein said top layer is about 4 mil thick.
 7. A thick filmmillimeter wave transceiver module according to claim 1, wherein saidbase plate is formed from a CTE matched material.
 8. A thick filmmillimeter wave transceiver module according to claim 1, wherein saidbase plate is about 0.1 to about 0.3 inches thick.
 9. A thick filmmillimeter wave transceiver module according to claim 8, wherein saidbase plate is about 0.125 inches thick.
 10. A multi-layer thick filmsubstrate board used in transceiver modules comprising: a plurality oflow temperature transfer tape layers, said layers comprising one of atleast: a DC signals layer having DC signal tracks and connections; aground layer having ground connections; a device layer having capacitorsand resistors embedded therein; a top layer that receives MMIC chipstherein; and a solder preform layer located between said device layerand said top layer for securing any MMIC chips received within the topsheet.
 11. A multi-layer thick film substrate board according to claim10, and further comprising isolation vias which extend through multiplelayers down to the ground layer.
 12. A substrate board according toclaim 10, wherein each of said layers within said multi-layer substrateboard is about 1 to about 4 mil thick.
 13. A substrate board accordingto claim 12, wherein said layers are about 3 mil thick.
 14. A substrateboard according to claim 10, wherein said top layer is about 4 milthick.
 15. A substrate board according to claim 10, wherein said baseplate is formed from a CTE matched material.
 16. A thick film millimeterwave transceiver module comprising: base plate; a multi-layer substrateboard received on said base plate and having a plurality of layers oflow temperature transfer tape, said layers comprising one of at least aDC signals layer having DC signal tracks and connections; a ground layerhaving ground connections; a device layer having capacitors andresistors embedded therein; at least one MMIC chip received on thesubstrate board and secured by a solder connection thereto andoperatively connected to said layers; and a channelization platereceived over the formed multi-layer substrate board and having channelsformed to receive MMIC chips and provide isolation between transmit andreceive signals.
 17. A thick film millimeter wave transceiver moduleaccording to claim 16, and further comprising isolation vias whichextend through multiple layers down to the ground layer.
 18. A thickfilm millimeter wave transceiver Module according to claim 16, andfurther comprising a solder preform layer for securing the at least oneMMIC to said substrate board.
 19. A thick film millimeter wavetransceiver module according to claim 16, and further comprising asilver epoxy securing the at least one MMIC to the substrate board. 20.A thick film millimeter wave transceiver module according to claim 16,and further comprising a radio frequency cover received over saidchannelization plate.
 21. A thick film millimeter wave transceivermodule according to claim 16, wherein each of said layers within saidmulti-layer substrate board is about 2 to about 4 mil thick.
 22. A thickfilm millimeter wave transceiver module according to claim 21, whereinsaid layers are about 3 mil thick.
 23. A thick film millimeter wavetransceiver module according to claim 16, wherein said base plate isformed from a CTE matched material.
 24. A thick film millimeter wavetransceiver module according to claim 23, wherein said base plate isabout 0.1 to about 0.3 inches thick.
 25. A thick film millimeter wavetransceiver module according to claim 24, wherein said base plate isabout 0.125 inches thick.
 26. A method of forming a thick filmmillimeter wave transceiver module comprising the steps of: forming abase plate; forming a multi-layer substrate board having a plurality oflayers of low temperature transfer tape; receiving the substrate boardon the base plate, wherein the substrate board comprises one of at leasta DC signals layer having signal tracks and connections; a ground layerhaving ground connections; a device layer having capacitors andresistors embedded therein; a top layer having cutouts for receivingMMIC chips therein; and securing the MMIC chip by solder.